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关键词：
Modeling and Characterization of Rf and Microwave Power Fets
书目信息
ISBN：
9780521870665（13位）
中图分类号：
TN
杜威分类号：
中文译名：
无线电和微波功率FET模型和特性
作者：
Peter Aaen
编者：
语种：
English
出版信息
出版社：
Cambridge University Press
出版地：
出版年：
2007
版本：
版本类型：
原版
丛书题名：
卷期：
文献信息
关键词：
RF and microwave engineering, semiconductor device engineering;electronic, optoelectronic devices, nanotechnology
前言：
摘要：
内容简介：
This is a book about the compact modeling of RF power FETs. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this is the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community.
目次：
1. Introduction; 2. Measurement techniques; 3. High-power FET device modeling considerations; 4. Function approximation and optimization; 5. Passive components: simulation and modeling; 6. Active component modeling; 7. Thermal model; 8. CAD tools choice; 9. Implementation of models; 10. Validation, Applications and usage of models; 11. Power amplifier design example; References; Index.
附录：
全文链接：
读者对象：
professionals, graduate students, academic researchers
实体信息
页码：
355
装帧：
Hardback
尺寸：
其它形态细节：
其它信息
原价：
USD
95.0000
原版ISBN：
其它ISBN：
图书特色：
书评：
扩展信息
Isbn：
0521870666
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